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The bypass circuit for the gate of the MOSFET switch takes more care. Gate resistance forms a voltage divider with resistance on the Source leg. Given the low value of R<sub>d</sub>: 82 Ω, and the MOSFET specification of V<sub>GS</sub> = -4 as the maximum pinch-off value, R<sub>G</sub> of 18 Ω is a good choice. The resulting V<sub>GS</sub> when the controlling voltage is pulled down ground is -4.1 V.
The bypass circuit for the gate of the MOSFET switch takes more care. Gate resistance forms a voltage divider with resistance on the Source leg. Given the low value of R<sub>d</sub>: 82 Ω, and the MOSFET specification of V<sub>GS</sub> = -4 as the maximum pinch-off value, R<sub>G</sub> of 18 Ω is a good choice. The resulting V<sub>GS</sub> when the controlling voltage is pulled down ground is -4.1 V.
== Notes ==
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