Changes

== Limitations of the Model ==

== Limitations of the Model ==

On of the principal limitations of this model turned out to be its inability to predict high-frequency behavior. Though the bandwidth inherent in the transistors themselves (4-5 GHz) was not explicitly in the model, the low-pass behavior due to source capacitance and amplifier input impedance should appear in the solutions naturally. It turned out that the more accurate modeling of the SiPM discharge as parallel injection of I_in ''in parallel'' with the intrinsic SiPM capacitor recovers this behavior. Including this capacitance (labeled ''CS'') and a parallel current injection loop restored the sensitivity to input impedance. This input impedance turned out to be a challenge for achieving faster signals desired in the tagger microscope electronics. This issue is further discussed in a dedicated page:[[SiPM Amplifier Optimization]]

One of the principal limitations of this model turned out to be its inability to predict high-frequency behavior. Though the bandwidth inherent in the transistors themselves (4-5 GHz) was not explicitly in the model, the low-pass behavior due to source capacitance and amplifier input impedance should appear in the solutions naturally. It turned out that the more accurate modeling of the SiPM discharge as parallel injection of I_in ''in parallel'' with the intrinsic SiPM capacitor recovers this behavior. Including this capacitance (labeled ''CS'') and a parallel current injection loop restored the sensitivity to input impedance. This input impedance turned out to be a challenge for achieving faster signals desired in the tagger microscope electronics. This issue is further discussed in a dedicated page:[[SiPM Amplifier Optimization]]