SiPM Amplifier Components - Revision history

Senderovich at 06:56, 1 October 2009

2009-10-01T06:56:59Z

Senderovich at 15:34, 18 March 2009

2009-03-18T15:34:56Z

Senderovich at 15:34, 18 March 2009

2009-03-18T15:34:10Z

Senderovich: /* Bypass Circuits */

2009-03-17T19:53:03Z

Bypass Circuits

Senderovich at 19:49, 17 March 2009

2009-03-17T19:49:52Z

Senderovich at 06:24, 17 March 2009

2009-03-17T06:24:49Z

Senderovich at 06:22, 17 March 2009

2009-03-17T06:22:54Z

Senderovich at 06:19, 17 March 2009

2009-03-17T06:19:01Z

Senderovich at 06:15, 17 March 2009

2009-03-17T06:15:31Z

Senderovich at 06:09, 17 March 2009

2009-03-17T06:09:42Z

@@ Line 51: / Line 51: @@
 | 14 || R<sub>h</sub> || 180 || &Omega;
 |-
 | 15 || R<sub>i</sub> || 2000 || &Omega;
 |-

@@ Line 10: / Line 10: @@
 {|border="0" cellpadding="3" cellspacing="1" style="text-align:center; font-family:times"
 |-
-! colspan="3" style="background:#ffdead; text-align:left" | Resistors (amp)
+! colspan="4" style="background:#ffdead; text-align:left" | Resistors (amp)
 |-
 | 18 || R<sub>1</sub> || 100 || k&Omega;
@@ Line 33: / Line 33: @@
 {|border="0" cellpadding="2" cellspacing="0" style="text-align:center; font-family:times"
 |-
-! colspan="3" style="background:#ffdead; text-align:left" | Resistors (sum)
+! colspan="4" style="background:#ffdead; text-align:left" | Resistors (sum)
 |-
 | 7 || R<sub>a</sub> || 120 || &Omega;
@@ Line 59: / Line 59: @@
 ||
 {| border="0" cellpadding="2" cellspacing="0" style="text-align:center; font-family:times"
-! colspan="3" style="background:#ffdead; text-align:left" | Capacitors
+! colspan="4" style="background:#ffdead; text-align:left" | Capacitors
 |-
 | 1 || C<sub>1</sub> || 10 || nF

@@ Line 12: / Line 12: @@
 ! colspan="3" style="background:#ffdead; text-align:left" | Resistors (amp)
 |-
-| R<sub>1</sub> || 100 || k&Omega;
+| 18 || R<sub>1</sub> || 100 || k&Omega;
 |-
-| R<sub>2</sub> || 10 || k&Omega;
+| 19 || R<sub>2</sub> || 10 || k&Omega;
 |-
-| R<sub>0</sub> || 560 || &Omega;
+| 1 || R<sub>0</sub> || 560 || &Omega;
 |-
-| R<sub>3</sub> || 1000 || &Omega;
+| 2 || R<sub>3</sub> || 1000 || &Omega;
 |-
-| R<sub>4</sub> || 330 || &Omega;
+| 3 || R<sub>4</sub> || 330 || &Omega;
 |-
-| R<sub>5</sub> || 470 || &Omega;
+| 4 || R<sub>5</sub> || 470 || &Omega;
 |-
-| R<sub>6</sub> || 50 || &Omega;
+| 20 || R<sub>6</sub> || 50 || &Omega;
 |-
-| R<sub>7</sub> || 1360 || &Omega;
+| 5 || R<sub>7</sub> || 1360 || &Omega;
 |-
-| R<sub>9</sub> || 1000 || &Omega;
+| 6 || R<sub>9</sub> || 1000 || &Omega;
 |}
 ||
@@ Line 35: / Line 35: @@
 ! colspan="3" style="background:#ffdead; text-align:left" | Resistors (sum)
 |-
-| R<sub>a</sub> || 120 || &Omega;
+| 7 || R<sub>a</sub> || 120 || &Omega;
 |-
-| R<sub>b</sub> || 1220 || &Omega;
+| 8 || R<sub>b</sub> || 1220 || &Omega;
 |-
-| R<sub>c</sub> || 100 || &Omega;
+| 9 || R<sub>c</sub> || 100 || &Omega;
 |-
-| R<sub>d</sub> || 82 || &Omega;
+| 10 || R<sub>d</sub> || 82 || &Omega;
 |-
-| R<sub>e</sub> || 3300 || &Omega;
+| 11 || R<sub>e</sub> || 3300 || &Omega;
 |-
-| R<sub>f</sub> || 680 || &Omega;
+| 12 || R<sub>f</sub> || 680 || &Omega;
 |-
-| R<sub>g</sub> || 560 || &Omega;
+| 13 || R<sub>g</sub> || 560 || &Omega;
 |-
-| R<sub>h</sub> || 180 || &Omega;
+| 14 || R<sub>h</sub> || 180 || &Omega;
 |-
-| R<sub>i</sub> || 2000 || &Omega;
+| 15 || R<sub>i</sub> || 2000 || &Omega;
 |-
-| R<sub>j</sub> || 392 || &Omega;
+| 16 || R<sub>j</sub> || 392 || &Omega;
 |-
-| R<sub>E</sub> || 700 || &Omega;
+| 17 || R<sub>E</sub> || 700 || &Omega;
 |}
 ||
@@ Line 61: / Line 61: @@
 ! colspan="3" style="background:#ffdead; text-align:left" | Capacitors
 |-
-| C<sub>1</sub> || 10 || nF
+| 1 || C<sub>1</sub> || 10 || nF
 |-
-| C<sub>2</sub> || 10 || nF
+| 2 || C<sub>2</sub> || 10 || nF
 |-
-| C<sub>3</sub> || 10 || nF
+| 3 || C<sub>3</sub> || 10 || nF
 |-
-| C<sub>4</sub> || 1 || nF
+| 4 || C<sub>4</sub> || 1 || nF
 |-
-| C<sub>5</sub> || 10 || nF
+| 5 || C<sub>5</sub> || 10 || nF
 |-
-| C<sub>a</sub> || 1 || nF
+| 6 || C<sub>a</sub> || 1 || nF
 |-
-| C<sub>c</sub> || 10 || nF
+| 7 || C<sub>c</sub> || 10 || nF
 |-
-| C<sub>d</sub> || 1 || nF
+| 8 || C<sub>d</sub> || 1 || nF
 |-
-| C<sub>h</sub> || 10 || nF
+| 9 || C<sub>h</sub> || 10 || nF
 |-
-| C<sub>C</sub> || 1 || nF
+| 10 || C<sub>C</sub> || 1 || nF
 |}
 ||

@@ Line 137: / Line 137: @@
 The passive components used to bypass high frequency noise to clean up DC levels were picked as follows. The 10&nbsp;nF capacitor frequently used in the circuit was deemed a good choice - high enough without raising concerns of introducing much inductance. This was also Photonique's choice for bypass capacitors in their prototype amplifier. The resistance on the bases of relevant transistors should be same or lower than that of the bench prototype (200&nbsp;&Omega;). 154&nbsp;&Omega; is sufficient, leading to a low pass filter with 3&nbsp;dB point of 100&nbsp;kHz. Frequencies below this point are well out of the amplifier's band (see [[SiPM Amplifier Signal Analysis]]).
-The bypass circuit for the gate of the MOSFET switch takes more care. Gate resistance forms a voltage divider with resistance on the Source leg. Given the low value of R<sub>d</sub>: 82&nbsp;&Omega;, and the MOSFET specification of V<sub>GS</sub>&nbsp;=&nbsp;-4 as the maximum pinch-off value, R<sub>G</sub> of 18&nbsp;&Omega; is a good choice. The resulting V<sub>GS</sub> when the controlling voltage is pulled down ground is -4.1&nbsp;V.
+The bypass circuit for the gate of the MOSFET switch takes more care. Gate resistance forms a voltage divider with resistance on the Source leg. Given the low value of R<sub>d</sub>: 82&nbsp;&Omega;, and the MOSFET specification of V<sub>GS</sub>&nbsp;=&nbsp;-4 as the maximum pinch-off value, R<sub>G</sub> of 18&nbsp;&Omega; is a good choice. The resulting V<sub>GS</sub> when the controlling voltage is pulled down ground is -4.1&nbsp;V. However, the 10&nbsp;nF capacitor, setting frequency roll-off just under 1&nbsp;MHz, is now insufficient. A 50&nbsp;nF value was judged to be good compromise.
 == Notes ==
 # The packaging of BF1108R is a mirror image of that in BF1108. The exact unit is picked depending on the needs of layout.

@@ Line 8: / Line 8: @@
 |-valign="top"
+|
-{|border="0" cellpadding="2" cellspacing="0" style="text-align:center; font-family:times"
+{|border="0" cellpadding="3" cellspacing="1" style="text-align:center; font-family:times"
 |-
 ! colspan="3" style="background:#ffdead; text-align:left" | Resistors (amp)
@@ Line 119: / Line 119: @@
-{| border="0" cellpadding="2" cellspacing="0" style="text-align:left; font-family:times"
+{| border="0" cellpadding="2" cellspacing="0" style="text-align:center; font-family:times"
 ! colspan="3" style="background:#ffdead; text-align:left" | Bypass Components
 |-
-! style="font-weight:bold" | Name || Value
+! style="font-weight:bold" | Comp. || BJT (X<sub>Bi</sub>) || MOSFET (X<sub>G</sub>)
 |-
-| R<sub>Bi</sub> || 154&nbsp;&Omega;
+| C || 10&nbsp;nF || 50&nbsp;nF
 |-
-| R<sub>G</sub>  || 18&nbsp;&Omega;
+| R || 154&nbsp;&Omega; ||  18&nbsp;&Omega;
 |}

@@ Line 86: / Line 86: @@
 |-
 ! style="font-weight:bold" | Num. || Label || Polarity
 |-
 | 1 || j || NPN

@@ Line 113: / Line 113: @@
 | BJT PNP || NXP (Philips) BFT92W
 |-
-| MOSFET  || NXP (Philips) BF1108(R)<ref>The packaging of BF1108R is a mirror image of that in BF1108. The exact unit is picked depending on the needs of layout.</ref>
+| MOSFET  || NXP (Philips) BF1108(R)<sup>[[#Notes|[1]]]</sup>
 |}
@@ Line 135: / Line 135: @@
 == Bypass Circuits ==
-The passive components used to bypass high frequency noise to clean up DC levels were picked as follows. The 10&nbsp;nF capacitor frequently used in the circuit was deemed a good choice - high enough without raising concerns of introducing much inductance. This was also Photonique's choice for bypass capacitors in their prototype amplifier. The resistance on the bases of relevant transistors should be same or lower than that of the bench prototype (200&nbsp;&Omega;). 154&nbsp;&Omega; is sufficient, leading to a low pass filter with 3&nbsp;dB point of 100&nbsp;kHz. Frequencies below this point are well out of the amplifier's band (see [[SiPM Amplifier Signal Analysis]].
+The passive components used to bypass high frequency noise to clean up DC levels were picked as follows. The 10&nbsp;nF capacitor frequently used in the circuit was deemed a good choice - high enough without raising concerns of introducing much inductance. This was also Photonique's choice for bypass capacitors in their prototype amplifier. The resistance on the bases of relevant transistors should be same or lower than that of the bench prototype (200&nbsp;&Omega;). 154&nbsp;&Omega; is sufficient, leading to a low pass filter with 3&nbsp;dB point of 100&nbsp;kHz. Frequencies below this point are well out of the amplifier's band (see [[SiPM Amplifier Signal Analysis]]).
 The bypass circuit for the gate of the MOSFET switch takes more care. Gate resistance forms a voltage divider with resistance on the Source leg. Given the low value of R<sub>d</sub>: 82&nbsp;&Omega;, and the MOSFET specification of V<sub>GS</sub>&nbsp;=&nbsp;-4 as the maximum pinch-off value, R<sub>G</sub> of 18&nbsp;&Omega; is a good choice. The resulting V<sub>GS</sub> when the controlling voltage is pulled down ground is -4.1&nbsp;V.
@@ Line 141: / Line 141: @@
 == Notes ==
-{{reflist}}

← Older revision		Revision as of 06:19, 17 March 2009
Line 138:		Line 138:

	The bypass circuit for the gate of the MOSFET switch takes more care. Gate resistance forms a voltage divider with resistance on the Source leg. Given the low value of R<sub>d</sub>: 82 Ω, and the MOSFET specification of V<sub>GS</sub> = -4 as the maximum pinch-off value, R<sub>G</sub> of 18 Ω is a good choice. The resulting V<sub>GS</sub> when the controlling voltage is pulled down ground is -4.1 V.		The bypass circuit for the gate of the MOSFET switch takes more care. Gate resistance forms a voltage divider with resistance on the Source leg. Given the low value of R<sub>d</sub>: 82 Ω, and the MOSFET specification of V<sub>GS</sub> = -4 as the maximum pinch-off value, R<sub>G</sub> of 18 Ω is a good choice. The resulting V<sub>GS</sub> when the controlling voltage is pulled down ground is -4.1 V.
		+
		+
		+	== Notes ==
		+	{{reflist}}