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→Design Implementation
[[Image:AmpVis_v6_DC.png|frame|center|DC characteristics of the amplifier. Units of V, mA, and Ω are implied unless corrected by different prefix.]]
[[Image:AmpVis_v6_DC.png|frame|center|DC characteristics of the amplifier. Units of V, mA, and Ω are implied unless corrected by different prefix.]]
==== Dynamic Range ====
==== Dynamic Range ====
A MOSFET switch the effective collector resistor in the first stage of the summing circuit between about 3 kΩ due to R<sub>e</sub> alone and the parallel path of 165 Ω. NXP's BF1108R has been selected for prototyping. Its typical <math>V_{GS}</math> for current pinch-off is -3 V (max: -4 V). Putting its source on the supply rail and switching the gate between 5 V (on) and 0 V (off). A bypass capacitor (not shown in diagram) near the gate lead is important to prevent spurious switching.
A MOSFET switch the effective collector resistor in the first stage of the summing circuit between about 3 kΩ due to R<sub>e</sub> alone and the parallel path of 165 Ω. NXP's BF1108R has been selected for prototyping. Its typical <math>V_{GS}</math> for current pinch-off is -3 V (max: -4 V). Putting its source on the supply rail and switching the gate between 5 V (on) and 0 V (off). A bypass capacitor (not shown in diagram) near the gate lead is important to prevent spurious switching.
==== Final Performance Parameters ====
With the final parameters specified by the circuit model resistor input vector set to
<pre>R = [.56 1 .33 .47 1.36 1 .12 1.22 .1 .082 3.3 .68 .56 .18 2 .392 .7]</pre>
(see [[SiPM Amplifier Components]] for a complete list of component values) the following theoretical specifications are achieved:
{| align="center" border="0"
| || Amplifier Stage || Summing Stage || Units || Comments
|-
| Gain (low/high) || 0.29 || 0.29/7.5 || kΩ
|-
| Input impedance || 13.5 || 27.3 || Ω
|-
| Power || 42 || 47 || mW || Power channel: 52 mW
|-
| Dynamic Range || 1.46 || 1.45 || V
|}
== See Also ==
== See Also ==