I want this page to become the definitive webpage on diamond properties, and I will not stop until this is the case! As such, this table is always under construction. If you want to add anything, please email me.

Diamond Property Value [ref.]
Crystal structure Diamond (cubic)
Space group: Fd3m
Pearson Symbol: cF8
Strukturbericht Designation: A4
Lattice constant (300 K) 3.56683 Å [1,2]
6.74033 a.u. [1,2]
3.5597 Å [10]
6.7269 a.u. [10]
Bond length (300 K) 1.5445 Å [2]
2.9187 a.u. [2]
Bond angle (the tetrahedral angle) 2×tan-1(√2)
1.9106332362... rads.
109.47122063...°
Hardness 10 Mohs [10]
Knoop hardness 8000 [10]
Knoop microhardness
(100) face
(110), (111) faces 		79 GPa [10]
56–102 [10]
58–88 [10]
Vickers microhardness:
(100) face
(111) face
88–147 GPa [10]
98 GPa [10]
Abrasive hardness 140,000 [10]
Modulus of elasticity 700–1200 GPa [10]
Young's modulus ([111] direction) 1223 GPa [11]
Volume compressibility 18×10-10 m2 N-1 [10]
Compressive yield strength 8680–16530 MPa [10]
Poisson's ratio 0.1–0.29 [10]
Atomic weight of C 12.0107(8) u (a.m.u.) [6]
1.9944(1)×10-26 kg [6]
Mass of 12C atom 12 u  (a.m.u.) [exact]
1.992648×10-26 kg
Density (300 K) 3515.25 kg m-3 [1]
Atomic concentration (300 K) 1.763×1023 cm-3 [2]
Bulk modulus 442.3 GPa [3]
Linear expansion coefficient (300 K) 1.05×10-6 K-1 [2]
Melting point 3773 K [2]
4027 °C [10]
Refractive index:
(546.1 nm)
(589 nm)
(591 nm)
(visible light range)
2.424 [2]
2.419 [10]
2.41 [7]
∼2.40–2.46 [9]
Dielectric constant:
(300 K, 1–10 kHz)
(25 °C, 1 MHz)
5.70 [2]
5.5–5.7 [10]
Dielectric strength 1000 kV mm-1 [10]
Dissipation factor 0.0002 [10]
Nature of band-gap Indirect
Electronic band-gap (0 K) 5.48 eV [4]
Electronic band-gap (300 K) 5.50 eV [1]
5.47 eV [4,5]
Electron mobility (300 K) 1800 cm2 V-1 s-1 [4]
Hole mobility (300 K) 1200 cm2 V-1 s-1 [4]
Relative permittivity 5.570 [1]
Raman frequency (first order) ∼1332 cm-1 [7,8]
Coefficient of (linear) thermal expansion (20 °C) 1.18 µm m°C-1 [10]
Heat capacity 0.4715 J g-1 °C-1 [10]
Thermal conductivity 2000 W m-1 K-1 [10]
Heat of formation 714.4 kJ mol-1 [10]
Debye temperature 2067 °C [10]

References

  1. Physics of Semiconductors and Their Heterostructures, Jasprit Singh, McGraw-Hill, New York (1993)
  2. D. W. Palmer, www.semiconductors.co.uk, 2003.04
  3. McSkimin and Andreath, J. Appl. Phys. 43, 2944 (1972)
  4. Physics of Semiconductor Devices, 2nd edition, S. M. Sze, John Wiley & Sons, New York (1981)
  5. S. Koizumi, invited review presented at the conference: The Physics of Group-IV Semiconductors, University of Exeter, U.K., 7th–10th April 2003
  6. IUPAC, http://www.chem.qmul.ac.uk/iupac/
  7. Synthetic Diamond - Emerging CVD Science and Technology, Spear and Dismukes, Wiley, New York (1994)
  8. S. A. Solin and K. Ramdas, Phys. Rev. B 1, 1687 (1970)
  9. Edwards, D. F. and Philipp, H. R. in HOC-I, pg. 665
  10. MatWeb, http://www.matweb.com/
  11. Wang, S.F. et al., Mater. Chem. and Phys. 85, 432–437 (2004)